High-Temperature Furnace for SiC Oxidation: c.OXIDATOR 150
High-temperature oxidation furnace
c.OXIDATOR 150 is a high-temperature furnace, especially designed for the oxidation of silicon carbide (SiC) by centrotherm.
Its capability to run high process temperatures of up to 1500°C and oxidation processes using O2, N2O, NO, NO2 or WetOx atmosphere makes for an excellent combination of flexibility and proven process quality.
Equipped with metal-free heating and double vacuum, c.OXIDATOR 150 is currently the safest ToxGas oxidation furnace on the market.
- Batch processing of 2“, 3“, 100 mm and 150 mm wafers or any combination
- Maximum heating rate up to 7.5 K/min
- Batch size up to 50 (150 mm) wafers
- Process pressure range from 850 mbar to atmospheric pressure